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B65621 LA4205 BAS19WS 121NQ TS272CBP SMLJ65 4ALVCH1 LA4205
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 DISCRETE SEMICONDUCTORS
DATA SHEET
M3D071
BAT74 Schottky barrier double diode
Product specification Supersedes data of March 1991 1996 Mar 19
Philips Semiconductors
Product specification
Schottky barrier double diode
FEATURES * Low forward voltage * Guard ring protected * Small SMD package. APPLICATIONS * Ultra high-speed switching * Voltage clamping * Protection circuits * Blocking diodes. DESCRIPTION Planar Schottky barrier double diode. Two separate dies encapsulated in a SOT143 small plastic SMD package.
1
Top view
BAT74
PINNING PIN 1 2 3 4 cathode (k1) cathode (k2) anode (a2) anode (a1) DESCRIPTION
handbook, halfpage 4
3 4 3
1 2
MAM194
2
Marking code: L41.
Fig.1 Simplified outline (SOT143), pin configuration and symbol.
1996 Mar 19
2
Philips Semiconductors
Product specification
Schottky barrier double diode
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per diode VR IF IFRM IFSM Ptot Tstg Tj Tamb continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current total power dissipation storage temperature junction temperature operating ambient temperature tp 1 s; 0.5 tp < 10 ms Tamb 25 C; see Fig.2 - -65 - -65 - series connection IF IFRM Note continuous forward current repetitive peak forward current tp 1 s; 0.5 - - - - - - 30 200 300 600 230 +150 125 +125 PARAMETER CONDITIONS MIN.
BAT74
MAX.
UNIT
V mA mA mA mW C C C
Double diode operation VR continuous reverse voltage 30 60 110(1) 200 V V mA mA
1. If both diodes are in forward operation at the same moment, total device current is max. 110 mA. If one diode is in reverse and the other in forward operation at the same moment, total device current is max. 200 mA.
1996 Mar 19
3
Philips Semiconductors
Product specification
Schottky barrier double diode
ELECTRICAL CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL Per diode VF forward voltage see Fig.3 IF = 0.1 mA IF = 1 mA; note 1 IF = 10 mA IF = 30 mA IF = 100 mA IR trr reverse current reverse recovery time VR = 25 V; note 2; see Fig.4 when switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA; see Fig.6 f = 1 MHz; VR = 1 V; see Fig.5 240 320 400 500 800 2 5 PARAMETER CONDITIONS MAX.
BAT74
UNIT
mV mV mV mV mV A ns
Cd Notes
diode capacitance
10
pF
1. Temperature coefficient of forward voltage -0.6%/K. 2. Pulsed test: tp = 300s; = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOT143 standard mounting conditions . PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS VALUE 500 UNIT K/W
1996 Mar 19
4
Philips Semiconductors
Product specification
Schottky barrier double diode
GRAPHICAL DATA
BAT74
300 P tot (mW) 200
MSA894
MSA892
10 3 handbook, halfpage IF (mA) 10
2 (1) (2) (3)
10
100
1
(1) (2) (3)
0
0
75
Tamb ( oC)
150
10 1
0
0.4
0.8
VF (V)
1.2
(1) Tamb = 125 C. (2) Tamb = 85 C. (3) Tamb = 25 C.
Fig.3 Fig.2 Power derating curve.
Forward current as a function of forward voltage; typical values.
10 3 IR (A) 10 2
(2) (1)
MSA893
15 Cd (pF) 10
MSA891
10
5 1
(3)
10 1 0 10 20 VR (V) 30
0
0
10
20
V R (V)
30
(1) Tamb = 125 C. (2) Tamb = 85 C. (3) Tamb = 25 C.
f = 1 MHz; Tamb = 25 C.
Fig.4
Reverse current as a function of reverse voltage; typical values.
Fig.5
Diode capacitance as a function of reverse voltage; typical values.
1996 Mar 19
5
Philips Semiconductors
Product specification
Schottky barrier double diode
BAT74
handbook, halfpage I
F
dI F dt
10% t Qr 90% IR tf
MRC129 - 1
Fig.6 Reverse recovery definitions.
1996 Mar 19
6
Philips Semiconductors
Product specification
Schottky barrier double diode
PACKAGE OUTLINE
BAT74
handbook, full pagewidth
0.75 0.60
0.150 0.090 4 0.1 max 10 max
o
3.0 2.8 1.9 3
B A 0.2 M A B
10 max
o
1.4 1.2
2.5 max
1 1.1 max
o
2 0.1 M A B
30 max
0.88
0 0.1 1.7
0.48
0 0.1
MBC845
TOP VIEW
Dimensions in mm.
Fig.7 SOT143.
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
1996 Mar 19
7


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